1. O. Lobacheva, M. Chavarha, Y.M. Yiu, T.K. Sham, L.V. Goncharova (2014) The local structure and ferromagnetism in Fe-implanted SrTiO₃ single crystals, Journal of Applied Physics, 116(1), 013901.pdf.
2. S.N. Dedyulin, L.V. Goncharova (2014) Thermodynamic and kinetic control of the lateral Si wire growth, Applied Physics Letters, 104(12), 123103 pdf.
3. E.G. Barbagiovanni, D.J. Lockwood, P.J. Simpson, L.V. Goncharova (2014)(Invited) Quantum confinement in Si and Ge nanostructures: Theory and experiment, Applied Physics Reviews, 1(1), 011302 pdf.
4. S.N. Dedyulin, G. Fanchini, L.V. Goncharova (2014) Reticular growth of silicon ridges: random walk in two dimensions, Crystal Growth and Design, 14, 1193. pdf.
5. S.N. Dedyulin, M.P. Singh, F.S. Razavi, L.V. Goncharova (2012) Energy loss of protons in SrTiO3 studied by medium energy ion scattering. NIMB 288, 60-65. pdf.
6. E.G. Barbagiovanni, D.J. Lockwood, P.J. Simpson, and L.V. Goncharova (2012) Quantum Confinement in Si and Ge Nanostructures. J. Appl. Phys. 111, 034307.pdf.
7. S.N. Dedyulin, L.V. Goncharova (2012) Thermal oxidation of Ge-implanted Si: Role of defects. NIMB 272, 334.pdf.
8. E.G. Barbagiovanni, S.N. Dedyulin, P.J. Simpson, and L.V. Goncharova (2012) Ion beam studies of Ge diffusion in Al₂O₃ NIMB 272, 74.pdf.
9. A. Romanenko, L.V. Goncharova (2011) Elastic recoil detection studies of near-surface hydrogen in cavity-grade niobium. Supercond. Sci. Tech. 24, 105017. pdf.
10. S.M.M. Yee, D.A. Crandles, L.V. Goncharova (2011) Ferromagnetism on the unpolished surfaces of single crystal metal oxide substrates. J. Appl. Phys. 110, 033906. pdf
11. E.G. Barbagiovanni, L.V. Goncharova, P.J. Simpson (2011) Electronic structure study of ion-implanted Si quantum dots in a SiO₂ matrix: Analysis of quantum confinement theories. Phys.Rev. B 83, 035112. pdf.
12. L.V. Goncharova, M. Dalponte, T. Feng, T. Gustafsson, E. Garfunkel, P.S. Lysaght, G. Bersuker (2011) Diffusion and interface growth in hafnium oxide and silicate ultra-thin films on Si (001). Phys. Rev. B 83, 115329. pdf.
13. Z. Tun, J.J. Noel, T. Bohdanowicz, L.R. Cao, R.G. Downing, L.V. Goncharova (2010) Cold-neutron depth profiling as a research tool for the study of surface oxides on metals. Can. J. Phys. 88 (10) 751-758. pdf.
14. E.G. Barbagiovanni, L.V. Goncharova, P.J. Simpson, N. Armstrong (2010) Optical Properties of Si Quantum Dots in Silica via an Implantation Mask, MRS Symp.Proceedings, 1208, (O7), 5-12. pdf.
15. E.Z. Ciflikli, L.V. Goncharova, B.J. Hinch, M. Alcantra Ortigoza, S. Hong, T.S. Rahman (2010) The dynamics of a c(2x2) phase induced by nitrogen adsorption on Cu(001). Phys.Rev.B 81 (11), 115465. pdf.
16. M. Dalponte, M.A. Adam, H. Boudinov, L.V. Goncharova, T. Feng, E. Garfunkel, T. Gustafsson (2009) Effect of excess vacancy concentration on As and Sb doping in Si. J. Physics D, 42 (16) 165106. pdf.
17. J. Liu, W.N. Lennard, L.V. Goncharova, D. Landheer, X.H. Wu, S.A. Rushworth, A.C. Jones (2009) Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol. J. Electrochemical Society, 156 G89-G96. pdf.
18. J. Lallo, L.V. Goncharova, B.J. Hinch, S. Rangan, R.A. Bartynski, and D.R. Strongin (2008) Structural studies of sub-monolayer Sn/Cu(001) phases. Surface Science, 602, 2348. pdf.
19. N. Goel, W. Tsai, C.M. Garner, Y. Sun, P. Pianettea, D.G. Schlom, L.V. Goncharova, E. Garfunkel, T. Gustafsson (2007) Band offsets between amorphous LaAlO₃ and In_0.53Ga_0.47As. Applied Physics Letters, 91, 113515. pdf.
20. Y. Wang, M.-T. Ho, L.V. Goncharova, L.S. Wielunski, S. Rivillon, Y.J. Chabal, T. Gustafsson, and N. Moumen (2007) Interface engineering and film characterization for atomic layer deposited ultra-thin hafnium oxide on silicon. Chemistry of Materials, 19, 3127. pdf.
21. M. Dalponte, H. Boudinov, L.V. Goncharova, E. Garfunkel, T. Gustafsson (2007) MEIS study of antimony implantation in SIMOX and vacancy-rich Si(100). J. Physics D: Applied Physics, 40, 4222. pdf.
22. L.V. Goncharova, O. Celik, T. Gustafsson, E. Garfunkel, M. Warusawithana, D.G. Schlom, H. Wen, M.B. Santos, S. Sayan, W. Tsai and N. Goel (2007) Interface Characterization in III-V CMOS Nanoelectronics. ECS Transactions, 11(4), 117. pdf.
23. L.V. Goncharova, M. Dalponte, T. Gustafsson, O. Celik, E. Garfunkel, P.S. Lysaght, G. Bersuker (2007) Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks. J. Vac. Sci. Technol A, 25, 261. pdf.
24. S.L. Harmer, R. Kolarova, L.V. Goncharova, W.N. Lennard, M.A. Munoz-Márquez, I.V. Mitchell and H.W. Nesbitt (2007) Surface structure of sphalerite studied by medium energy ion scattering and XPS. Surface Science, 601, 352. pdf.

(2001-2007)

25. M. Caymax, S. Van Elshocht, M. Houssa, A. Delabie, T. Conard, M. Meuris, M.M. Heyns, A. Dimoulas, S. Spiga, M. Fanciulli, J.W. Seo, L.V. Goncharova (2006) HfO₂ as gate dielectrics on Ge: Interfaces and deposition techniques. Materials Science and Engineering B, 135, 256. pdf.
26. L.V. Goncharova, M. Dalponte, D.G. Starodub, E. Garfunkel, T. Gustafsson, P.S. Lysaght, B. Foran, J. Barnett and G.I. Bersuker (2006) Oxygen diffusion and reactions in Hf-based dielectrics. Applied Physics Letters, 89, 044108. pdf.
27. M. Dalponte, H. Boudinov, L. V. Goncharova, E. Garfunkel and T. Gustafsson (2006) MEIS study of As implantation in O or N pre-implanted Si(001). Nuclear Instruments and Methods in Physics Research. Section B, 249, 874. pdf.
28. L.V. Goncharova, D.G. Starodub, E. Garfunkel, T. Gustafsson, V. Vaithyanathan, D.G. Schlom (2006) Interface structure and thermal behaviour of epitaxial SrTiO3 thin films on Si(001). Journal of Applied Physics, 100, 014912. pdf.
29. T. Gustafsson, E. Garfunkel, L.V. Goncharova, D. Starodub, R. Barnes, M. Dalponte, G. Bersuker, B. Foran, P. Lysaght, D.G. Schlom, V. Vaithyanathan, M. Hong, J.R. Kwo (2006) Structure, composition and order at interfaces of crystalline oxides and other high-K materials on silicon. NATO Science series "Defects in high-K gate dielectric stacks." E. Gusev (ed.), Springer, P. 349-360.
30. D.J. Lichtenwalner, J.S. Jur, A.J. Kingon, M.P. Agustin, Y. Yang, S. Stemmer, L.V. Goncharova, T. Gustafsson, E. Garfunkel (2005) Lanthanum silicate gate dielectic stacks with sub-nanometer EOT utilizing an interfacial consumption reaction. Journal of Applied Physics 98, 024314. pdf.
31. M. Hong, A. R. Kortan, P. Chang, Y. L. Huang, C. P. Chen, and H. Y. Chou, H. Y. Lee, J. Kwo, M.-W. Chu and C. H. Chen, L. V. Goncharova, E. Garfunkel, and T. Gustafsson (2005) High-quality nano-thickness single crystal Sc₂O₃ film grown on Si(111). Applied Physics Letters 87, 251902. pdf.
32. A. Delabie, R. Puurunen, B. Brijs, M. Caymax, Th. Conard, B. Onsia, O. Richard, W. Vandervorst, Ch. Zhao, M.M. Viitanen, H.H. Brongersma, M. de Ridder, L.V. Goncharova, E. Garfunkel, T. Gustafsson, W. Tsai, M. Heyns, M. Meuris, P. Pijpers (2005) Atomic Layer Deposition of Hafnium Oxide on Germanium Substrates. Journal of Applied Physics, 97, 064104. pdf.
33. R.T. Brewer, M.-T. Ho, K.Z. Zhang, L.V. Goncharova, D.G. Starodub, T. Gustafsson, Y.J. Chabal, N. Moumen (2004) Ammonia Pre-treatment for High-K Dielectric Growth on Silicon. Applied Physics Letters, 85, 3830-3832. pdf.
34. X. Zhang, D.R. Strongin, L.V. Goncharova, A.V. Ermakov, and B.J. Hinch (2004) Thermal Chemistry of CH₃ on Si/Cu(100); the role of Sn as a promoter. Journal of Physical Chemistry B 108, 16213-16219. pdf.
35. M. Dalponte, H. Boudinov, L.V. Goncharova, D. Starodub, E. Garfunkel, T. Gustafsson (2004) Thermal activation of As implanted in Si and Separation-by-Implanted-Oxygen. Journal of Applied Physics, 96, 7388-7391. pdf.
36. L.V. Goncharova, B.J. Hinch, A. Hellman, M. Hassel, M. Persson (2003) HD J not equal to 0 Bound State Resonances above the Cu (001) Surface: The Effects of Physisorption Anisotropy and the Observation of Anomalous Debye-Waller Behaviour at Resonance Conditions. Phys.Chem.Chem.Phys., 5, 877-882. pdf.
37. L.V. Goncharova, S.K. Clowes, R.R. Fogg, A.V. Ermakov, and B.J. Hinch (2002) Phosphine Adsorption and the Production of Phosphide Phases on Cu (001). Surface Science, 515, 553-566. pdf.
38. L.V. Goncharova, J. Braun, A.V. Ermakov, G.G. Bishop, D.-M. Smilgies and B.J. Hinch (2001) Cu (001) to HD Energy Transfer and Translational to Rotational Energy Conversion on Surface Scattering. Journal of Chemical Physics, 115, 7713-7724. pdf.

SELECTED CONFERENCE PRESENTATIONS

1. L.V. Goncharova, "Interface characterization in future CMOS materials" Fourth Western Institute for Nanomaterials Science Workshop, London, ON, May 16, 2008. Oral presentation.
2. L.V. Goncharova, "Gate metal-induced diffusion and interface reactions in metal oxide dielectrics" 4th International Workshop on High-Resolution Depth Profiling, Radebeul, Germany, June 17-21. Invited talk.
3. L.V. Goncharova, O. Celik, T. Gustafsson, R. Garfunkel, N. Goel, S.Sayan, W. Tsai, "Interfacial engineering and electrical properties of Hf oxide films on InGaAs," APS March Meeting, Denver, CO, March 5-9, 2007. Oral presentation.
4. L.V. Goncharova, T. Feng, T. Gustafsson, R. Garfunkel, "Ion scattering studies of high-k gate stacks: thermal stability and interdiffusion." MRS Meeting, Boston, MA, November 26-30, 2006. Oral presentation.
5. M. Dalponte, H. Boudinov, L. V. Goncharova, T. Feng, E. Garfunkel and T. Gustafsson, "High-resolution depth profiling of implanted As and Sb in Si(001) with excess vacancy concentration." AVS Meeting, San Francisco, CA, November 12-17, 2006. Oral presentation.
6. L.V. Goncharova, M. Dalponte, T. Gustafsson, R. Garfunkel, "Medium Energy Ion Scattering Study of Oxygen Diffusion-Reactions in High-K Dielectrics on Si." Electronic Materials Conference, University Park, PA, June 28-30, 2006. Oral Presentation.
7. L.V. Goncharova, M. Dalponte, T. Gustafsson, R. Garfunkel, "Oxygen transport and interfacial layer engineering in high-K metal oxide gate stacks." APS Meeting, Baltimore, MD, March 13-19, 2006. Oral presentation.
8. L.V. Goncharova, M. Dalponte, T. Gustafsson, E. Garfunkel, "Diffusion and reactions in metal oxide dielectric stacks." 20th Annual Symposium Laboratory for Surface Modification, Piscataway, NJ, March 2, 2005. Oral presentation.
9. L.V. Goncharova, "Medium energy ion scattering study of oxygen transport and reactions in high-K dielectrics on Si." Department of Physics and Astronomy, University of Western Ontario, London, ON, January 16, 2006. Invited talk.
10. L.V. Goncharova, D.G. Starodub, R. Barnes, E. Garfunkel, T. Gustafsson, G. Bersuker, B. Foran, P. Lysaght, "Ion scattering study of oxygen diffusion in ultra-thin high-k metal oxide gate stacks." Semiconductor Interface Specialists Conference, Washington DC, December 1-3, 2005. Oral presentation.
11. L.V. Goncharova, D. Starodub, E. Garfunkel, T. Gustafsson, "Epitaxial Oxide films grown on Si studied by Medium Energy Ion Scattering." International workshop on high-resolution beam analysis, Bar Harbor, ME, May 23-26, 2005. Oral presentation.
12. D.G. Starodub, L.V. Goncharova, E. Garfunkel, T. Gustafsson, D.G. Schlom, "Medium energy ion scattering studies of the structure and composition of epitaxial SrTiO₃ films on silicon." AVS Meeting, Baltimore, MD, November 2-7, 2003. Oral presentation.
13. L.V. Goncharova, D.V. Potapenko, B.J. Hinch, X. Zhang, D.R. Strongin, L. Wood, "Helium Atom Scattering Studies of Si-Cu (001) and Sn-Cu (001) Surface Alloys.", 49th AVS Meeting, Denver, CO, November 4-8, 2002. Oral presentation.
14. L.V. Goncharova, A.V. Ermakov, B.J. Hinch, "HD scattering on Cu (001): Rotationally mediated bound state resonances and evidence for interaction of the bound states with the surface phonons", 48th AVS Meeting, San Francisco, CA, October 29-November 2, 2001. Oral presentation.
15. L.V. Goncharova, S.K. Clowes, A.V. Ermakov and B.J. Hinch, "Structural and vibrational studies of PX₃ adsorption on Cu(001) using high-resolution helium atom scattering." 10th International Conference on Solid Films and Surfaces, Princeton, NJ, July 9-13, 2000. Poster.